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WhatsApp: +86 15361554542
info@shysemi.com
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Less Energy

More Efficiency

  • Home
  • Products 
    • IPM Modules
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
    • SiC
    • FRD(MUR)
    • Bridge Rectifier
  • Application 
    • Energy Vehicle
    • Home Appliance
    • Renewable Energy
    • Industrial Equipment
    • Data Centers
  • Technology 
    • Latest IPM Technology
    • High Voltage (HV) Die Technolog
    • Reliability & Qualification
  • About Us 
    • Our Company
    • Technical Team
    • Custom Solutions
  • Contact Us
  • Blog
  • …  
    • Home
    • Products 
      • IPM Modules
      • IGBT Modules
      • IGBT Discretes
      • IGBT Chips
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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

All Categories - Design and manufacture semiconductor products - SHYSEMI

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IGBT Modules
HOT PRODUCTS
IPM Modules
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[SYMT200FF120T6H-M] 1200V/200A IGBT module provides low switching loss and built-in NTC

VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.6 Details: SYMT200FF120T6H-M 1200V 200A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low switching loss, low stray inductance, NTC thermistor, 2500V isolation, RoHS compliant, ideal for industrial inverters, servo drives and high-power semiconductor solutions.

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[SYMT450HF120T9H-M] 1200V/450A Automotive-grade IGBT module featuring copper wire bonding

VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.6 Details: High-power 1200V IGBT Module designed for hybrid electric vehicles, commercial vehicle motor drives, and inverter systems, delivering fast switching, robust RBSOA capability, and low conduction loss.

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[SYMF100HF120T1VH] 1200V/100A NPT IGBT Module featuring low switching loss, low VCE(sat), and >10μs

VCE(SAT)@typ.Tj=25°C: 5 VGEth@typ.Tj=25°C: 3.5 Detail: IGBT Module integrates advanced NPT IGBT technology with low saturation voltage, fast switching performance, low stray inductance, and robust short-circuit withstand capability, making it ideal for welding machines, UPS, SMPS, induction heating, and industrial inverter applications.

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[SYMT200CU120T2VH] 1200V/200A IGBT module for welding, HEV and industrial drive

VCE(SAT)@typ.Tj=25°C: 6 VGEth@typ.Tj=25°C: 3.15 Details: SYMT200CU120T2VH-M 1200V 200A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low loss, low stray inductance, 2500V isolation, RoHS compliant, ideal for welding, HEV inverter, UPS, brake chopper and industrial motor drive semiconductor solutions.

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[SYMT200HF170T2VH] 1700V/200A IGBT module delivers low saturation voltage, short-circuit reliability

VCE(SAT)@typ.Tj=25°C: 6.0 VGEth@typ.Tj=25°C: 2.3 Details: SYMT200HF170T2VH 1700V 200A high-voltage IGBT module features >10μs short-circuit withstand, low VCE(sat), low switching loss, low stray inductance, 2500V isolation, RoHS compliant, ideal for industrial inverters, motor drives and UPS semiconductor solutions.

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[SYMT300HF120T9H-M] 1200V/300A IGBT module features low loss, high short-circuit reliability and NTC

VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.6 Details: SYMT300HF120T9H-M 1200V 300A trench field-stop IGBT module offers >10μs short-circuit withstand, low switching loss, low stray inductance, copper wire bonding, NTC thermistor, 2500V isolation, RoHS compliant, ideal for HEV, automotive, commercial vehicles and motor drive semiconductor solutions.

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[SYMT100PI120T6H-M] 1200V/100A IGBT module features low saturation voltage, built-in NTC

VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 5.5 Details: SYMT100PI120T6H-M 1200V 100A field stop trench gate IGBT module offers >10μs short-circuit withstand, low VCE(sat), low loss, low stray inductance, NTC thermistor, 2500V isolation, RoHS compliant, ideal for industrial inverters, servo drives, brake chopper and rectifier semiconductor solutions.

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[SYMT150HF120T1VH-SF] 1200V/150A, Field Stop Trench Gate IGBT Module with ultra-low VCE(sat)

VCE(SAT)@typ.Tj=25°C: 5.7 VGEth@typ.Tj=25°C: 1.7 Details: Field Stop Trench Gate IGBT Module delivers low conduction loss, fast switching performance, low stray inductance, and high short-circuit withstand capability, optimized for industrial inverter, welding machine, UPS, SMPS, induction heating, and high-power conversion applications.

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[SYMT150HF170T2VH] 1700V/150A IGBT module features low saturation voltage, short-circuit capability

VCE(SAT)@typ.Tj=25°C: 6.0 VGEth@typ.Tj=25°C: 2.3 Details: SYMT150HF170T2VH 1700V 150A high-voltage IGBT module offers >10μs short-circuit withstand, low VCE(sat), low switching loss, 2500V isolation, RoHS compliance, ideal for industrial inverters, motor drives and UPS semiconductor solutions.

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[SYMT150PI120T6H-T4M] 1200V/150A IGBT module delivers low saturation voltage and built-in NTC

VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.9 Details: SYMT150PI120T6H-T4M 1200V 150A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low switching loss, low stray inductance, NTC thermistor, 2500V isolation, RoHS compliant, ideal for industrial inverters, servo drives, brake chopper and rectifier semiconductor solutions.

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[SYIM776C-SAAT] 600V/20A, Hybrid SiC IPM integrating 3-phase inverter and high-frequency PFC

Strength: 3Φ PFC: 40A 600V Applicable power: Up to 100 kHz, with NTC Details: SYIM776C-SST Hybrid SiC IPM combines 600V 3-phase RC-IGBT inverter, 40A PFC, SiC Schottky Barrier Diode (SiC SBD), and integrated protection functions to deliver high-efficiency power conversion and stable motor control for inverter and converter applications.

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[SYMT200HF120T2VH-M] 1200V/200A high-current IGBT module delivers low saturation voltage

VCE(SAT)@typ.Tj=25°C: 5.7 VGEth@typ.Tj=25°C: 1.8 Details: SYMT200HF120T2VH-M 1200V 200A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low loss, low stray inductance, 2500V isolation, RoHS compliant, ideal for welding, HEV inverter, UPS, industrial motor drive semiconductor solutions.

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[SYIM756C-SST] 600V/15A, Hybrid SiC IPM with integrated PFC, low power loss, and built-in protection

Strength: 3Φ PFC: 40A 600V Applicable powerUp to 100 kHz, with NTC Details: 600V Intelligent Power Module features Hybrid SiC technology, low switching loss IGBT, SiC Schottky Barrier Diode (SBD), integrated bootstrap circuit, and advanced protection functions for inverter, converter, and motor control applications.

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[SYMT300HF120T2VH-M] 1200V/300A IGBT module delivers low saturation voltage, high reliability

VCE(SAT)@typ.Tj=25°C: 5.9 VGEth@typ.Tj=25°C: 1.9 Details: SYMT300HF120T2VH-M 1200V 300A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low switching loss, low stray inductance, 2500V isolation and RoHS compliance, ideal for welding, HEV inverter, UPS and industrial motor drive semiconductor solutions.

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[SYIM776C-SST] 600V/20A, Compact SIP intelligent power module with SiC PFC, low switching loss

Strength: 3Φ PFC: 40A 600V Applicable Power: Up to 100 kHz, with TDF Details: SYIM776C-SST 600V Intelligent Power Module features Hybrid SiC technology, RC-IGBT architecture, low EMI performance, integrated bootstrap circuit, and NTC temperature sensing, optimized for industrial inverter, motor drive, UPS, SMPS, and energy-efficient power electronics systems.

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[SYMT100HF170T1VH] 1700V/100A IGBT module features low saturation voltage, low switching loss

VCE(SAT)@typ.Tj=25°C: 6 VGEth@typ.Tj=25°C: 2.4 Details: SYMT100HF170T1VH 1700V 100A field stop trench gate IGBT module offers >10μs short-circuit capability, low VCE(sat), low switching loss, 4500V isolation, RoHS compliance, ideal for inverters, UPS, servo drives and wind power semiconductor solutions.

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[SYIM756C-SAAT] 600V/15A Compact SIP intelligent power module with SiC PFC, optimized thermal design

Strength: 3Φ PFC: 40A 600V Applicable power: Up to 100 kHz, with NTC Details: SYIM756C-SST MIPS™ Intelligent Power System integrates 600V IGBT inverter, high-frequency SiC PFC, NTC temperature sensing, under-voltage protection, and low EMI design, ideal for motor drives, UPS, SMPS, and energy-efficient power conversion systems.

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[SYMT150CU120T2VH] 1200V/150A IGBT module for industrial power applications

VCE(SAT)@typ.Tj=25°C: 5.9 VGEth@typ.Tj=25°C: 1.7 Details: SYMT150CU120T2VH-M 1200V 150A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low loss, low stray inductance, 2500V isolation, RoHS compliant, ideal for welding, HEV inverter, UPS and industrial motor drive semiconductor solutions.

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[SYMT50PI120T6H-T4M] 1200V/50A IGBT module delivers low saturation voltage, built-in NTC

VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 5.6 Details: SYMT50PI120T6H-T4M 1200V 50A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low loss, low stray inductance, NTC thermistor, 2500V isolation, RoHS compliant, ideal for industrial inverters, servo drives, brake chopper and rectifier semiconductor solutions.

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[SYMT50PI120T6H-M] 1200V/50A, IGBT module delivers low saturation voltage, low switching loss

VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.6 Details: SYMT50PI120T6H-M 1200V 50A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low loss, low stray inductance, NTC thermistor, 2500V isolation, RoHS compliant, ideal for industrial inverters, servo drives, brake chopper and rectifier semiconductor solutions.

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